Memory Circuit Design Engineer - Staff, HBM

Req ID:

JR97954 Memory Circuit Design Engineer - Staff, HBM Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron's Heterogeneous Integration Group (HIG) is shaping the future of AI and accelerated computing by developing advanced memory solutions! The team focuses on designing and optimizing High Bandwidth Memory (HBM) products for AI/ML, high-performance computing (HPC), and data-centric systems, collaborating across global engineering and product teams to deliver industry-leading performance, power efficiency, and reliability! HBM product family is growing due to high demand from industry leading semiconductor companies. As a HBM Memory Design Engineer in sustaining role you will be working with teams like Design Engineering (DE), Product Engineering (PE), Process Integration, Packaging and Technology Development (TD) on evaluating silicon issues seen on all the current HBM designs. You will interact with the architecture team to understand new or modified specification requests, and you will work with the team on implementing and verifying the design, supporting the design release to silicon and all future needs arising for the design. You will have an opportunity to rotate to a Design Engineer role and work on the next generation HBM products. Responsibilities

• Design digital, analog, and memory core circuits using CMOS logic and transistors, implementing device specifications from concept to solution.
• Parasitic modeling and assisting in design validation, reticle experiments, and required tape-out revisions.
• Create optimized floorplans for circuit placement, routing, power delivery, sense margins, array timing, and die size, including layout leadership
• Simulate and verify designs using industry-standard tools (e.g., FineSim, HSPICE, Verilog).
• Perform extensive power delivery network analysis and optimization.
• Assist in running various design checks prior to initial tapeouts and revision tapeouts.
• Drive innovation for future memory generations in a dynamic, collaborative environment.
• Debug and identify root causes and solutions for pre-silicon and post-silicon issues encountered in current HBM products.
• Engage with Standards, CAD, modeling, and verification groups to ensure the design quality.
• Prepare project status reports and lead design reviews to communicate progress and technical decisions. Qualifications
• BS or MS in Electrical Engineering or a related equivalent field.
• 6+ years (BS) or 4+ years (MS) of relevant experience.
• Extensive knowledge of CMOS circuit design and semiconductor device physics.
• Experience with schematic entry, Verilog, FastSpice, and HSPICE simulations.
• Strong understanding of timing/area/power/complexity trade-offs in DRAM or mixed-signal design. Preferred Qualifications
• Strong verbal and written communication skills for conveying complex technical concepts.
• Self-motivated, hard-working team player who thrives in diverse environments.
• Excellent problem-solving and analytical skills, with scripting experience (Python, TCL, Perl)
• Prior RTL design flow experience in DRAM or Foundry processes.

Job Profile(s): Systems Design Engineer 3 - Systems Design Engineer 4

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