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Sr. Director of Product Engineering - Silicon Carbide (SiC)

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NAVITAS SEMICONDUCTOR USA, INC.

Torrance, CA (In Person)

$212,500 Salary, Full-Time

Posted 2 weeks ago (Updated 1 week ago) • Actively hiring

Expires 6/15/2026

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Job Description

Sr. Director of Product Engineering - Silicon Carbide (SiC)
NAVITAS SEMICONDUCTOR USA, INC.
Torrance, CA Job Details Full-time $200,000 - $225,000 a year 19 hours ago Qualifications Statistics Quality control statistical data analysis Statistical analysis Cross-functional collaboration Semiconductor experience Cross-functional team management Cross-functional communication Senior leadership High voltage Full Job Description Job Purpose Navitas Semiconductor (
Nasdaq:
NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification. The R&R Senior Director of Product Engineering - SiC is responsible for leading the product engineering organization and owning the full product lifecycle execution for Navitas' Silicon Carbide power device platforms. This role ensures robust electrical performance, manufacturability, yield, reliability, and customer quality from initial silicon bring-up through high-volume manufacturing and field deployment. Key Responsibilities and Duties Lead all silicon carbide (SiC) product engineering activities, overseeing the process from initial silicon development through qualification, production release, and providing ongoing sustaining support. Lead and coordinate SiC product development, collaborating with Business Units, Technology Development, Foundry Device Engineering, OSATs, Test Engineering, Quality, Operations, and PMO. Develop and implement CP, FT, and QC test programs, and oversee the electrical characterization of SiC products throughout their product lifecycle. Oversee the creation and release of SiC datasheets and all associated documentation. Define and implement the SiC reliability strategy. This includes establishing look-ahead reliability test plans, overseeing technology and product qualification, and leading
JEDEC, AEC
Q101, application-driven, and customer-specific qualification processes. Establish and optimize defect screening methodologies such as
DPAT, GDBN, SBL, SYL.
Oversee production electrical and parametric data monitoring across all manufacturing stages, including wafer fabrication, chip probing (CP), final testing (FT), quality control (QC) screening. Lead the engineering disposition of production materials. Lead efforts in yield monitoring, debug, and yield improvement for SiC products through collaboration with Foundry Device Engineering and Technology teams. Serve as the senior technical escalation point for all SiC product issues. Responsibilities include supporting customer inquiries, conducting failure analysis reviews, and executing corrective actions. Support pre-sales activities and strategic customer engagements by providing in-depth technical insights into product behavior, reliability margins, and application performance. Build, lead, and mentor a high performing SiC product engineering organization, including teams focused on product development, characterization, yield, and reliability. Required Qualifications MS or PhD (preferred) in Electrical Engineering. Minimum 12+ years of product engineering experience in power semiconductor devices. Strong hands-on experience with high-voltage SiC technologies (MOSFETs, diodes, JFETs, power modules). Deep understanding of SiC device physics, reliability mechanisms, and high-power applications. Proven experience leading multi-disciplinary engineering teams. Strong background in yield analytics, defect screening, production data analysis, and statistical methods. Demonstrated ability to work cross-functionally with Technology, Foundry, Test, Quality, Operations, PMO, and FAE teams and external foundries and OSATs. What We Offer A front-row seat to the future of power electronics through industry-leading SiC and GaN technologies. A fast-paced, execution-focused environment with significant ownership and impact. Highly collaborative culture with deep technical expertise across teams. Competitive total rewards including base salary, performance bonus, equity awards, and comprehensive benefits.
Base Salary Range:
$200,000-$225,000 depending on experience