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Principal Memory Design Engineer, HBM
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Micron Technology
Richardson, TX (In Person)
Full-Time
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Job Description
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JR87473 Principal Memory Design Engineer, HBM Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Principal Design Engineer is responsible for designing, simulating, and optimizing DRAM circuits while leading layout processes and ensuring robust verification and reliability. This role collaborates cross‑functionally to support manufacturability, drive innovation for future memory generations, and oversee project activities from design through validation and review. Responsibilities- Design and implement DRAM circuits, including digital, analog, and memory core circuitry, based on device specifications.
- Create and optimize floorplans for circuit placement, signal routing, power delivery, sense margins, timings, and die size.
- Conduct circuit simulations using FINESIM, HSPICE, and VERILOG; analyze power, speed, and reliability.
- Model parasitics in simulation, verify routing and power integrity, and support validation, reticle experiments, and tape-out revisions.
- Confirm simulation-to-silicon correlation and recommend schematic edits.
- Contribute to documentation, training, standardization efforts, and cross-group communication.
- Manage build and layout resources, monitor task progress, and lead technical reviews.
- Serve as a primary contact for design, layout, verification, and testing while preparing project status reports. Requirements
- Coursework in CMOS Circuit Design, VLSI, and Analog Circuit Design, with knowledge of device reliability.
- Expertise in Cadence Virtuoso, physical layout, and circuit floor planning.
- Experience with FINESIM, HSPICE, and VERILOG simulation tools.
- Strong analytical and problem‑solving abilities with significant technical contributions and innovation history.
- Deep expertise in DRAM subsystem architecture, specification, operation, or design, including cross‑department technical leadership. Preferred Qualifications
- Highly self‑motivated with strong problem‑solving instincts and a passion for discovering new solutions.
- In‑depth awareness of industry‑specific technologies and trends.
- Excellent communication and interpersonal skills.
Semiconductor Design Eng MTS Relocation Level:
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