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Principal InP Laser Development Engineer

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NOKIA

Sunnyvale, CA (In Person)

$228,261 Salary, Full-Time

Posted 3 weeks ago (Updated 3 weeks ago) • Actively hiring

Expires 5/28/2026

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Job Description

Principal InP Laser Development Engineer
NOKIA US
Salary range: $159,782.61 -$ 296,739.13 United States, California, Sunnyvale 1322 Bordeaux Drive (Show on map) Apr 12, 2026 Prerequisite experience should include 1 or more areas Design of InP lasers for transmitter PICs Design of InP lasers for high-power applications Key engineering expertise in all of the following areas is required Design and simulation of optical waveguides, coupling lasers to fibers Simulation of lasers and SOAs with commercial or personally developed software, including carriers and optical fields Design of epitaxial layers required for active devices Process design/fabrication knowledge or process development experience of InP devices or PICs Expertise in testing characterization of InP lasers and SOAs Extensive photonic device data query and analysis in manufacturing environment Experience guiding a team to develop InP lasers for commercial products
Location:
willing to relocate to Sunnyvale/San Jose, CA Ph.D. in EE or Physics, 8 to 15yrs industry experience designing and developing InP lasers for high volume applications. NION2026

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