Plasma Enhanced CVD Semiconductor Process Engineer / Principal Plasma Enhanced CVD Semiconductor Process Engineer 2nd shift

RELOCATION ASSISTANCE

Relocation assistance may be available

CLEARANCE REQUIRED FOR START

No

CLEARANCE TYPE

Secret TRAVEL:

Yes, 10% of the Time Description At Northrop Grumman, our employees have incredible opportunities to work on revolutionary systems that impact people's lives around the world today, and for generations to come. Our pioneering and inventive spirit has enabled us to be at the forefront of many technological advancements in our nation's history - from the first flight across the Atlantic Ocean, to stealth bombers, to landing on the moon. We look for people who have bold new ideas, courage and a pioneering spirit to join forces to invent the future, and have fun along the way. Our culture thrives on intellectual curiosity, cognitive diversity and bringing your whole self to work — and we have an insatiable drive to do what others think is impossible. Our employees are not only part of history, they're making history. The Northrop Grumman Microelectronics Center (NGMC) of Northrop Grumman Mission Systems is seeking an independent and resourceful Plasma Enhanced Chemical Vapor Deposition (PECVD) Semiconductor Process Engineer. Advanced Technology Lab (ATL) - located outside of Baltimore, Maryland - is where we design, manufacture, and test semiconductor products for internal and commercial production customers as well as emerging technology programs. Northrop Grumman's ATL semiconductor foundry has unique capabilities supporting a range of production microelectronic devices (Silicon, Gallium Arsenide, Gallium Nitride, Silicon Carbide, Carbon Nanotubes) and providing leading edge technology development in superconducting electronics. Our devices enable a number of Northrop Grumman's ground-based radars, avionic radars, and space systems. Join us for the chance to work with an experienced and talented team while helping serve your country. Enjoy the opportunity to grow and learn with a variety of challenging projects in production, R D, ongoing long-term programs, and new programs targeting future military platforms. Our multidisciplinary foundry team enables activities from development to sustainment process engineering. ATL is responsible for all aspects of semiconductor technology including design, mask making, wafer fabrication, testing, and assembly. This is a full-time 2rd shift position, covering at a minimum Monday - Friday 2pm-11pm. The Plasma Enhanced Chemical Vapor Deposition (PECVD) Semiconductor Process Engineer will be responsible for: All aspects of sustaining existing PECVD processes for a development line including process qualifications and technician training. Interfacing with other unit process engineers, operations, and integration engineers during the design and execution of process/equipment improvement projects. Developing PECVD processes for new materials. Developing new PECVD processes for emerging technologies in both microelectronics and superconducting electronics. Writing and maintaining process documentation. Supporting statistical process control (SPC) and continuous improvement efforts Performing all other related duties as assigned #NGATL This requisition may be filled as a Plasma Enhanced Chemical Vapor Deposition (PECVD) Semiconductor Process Engineer or Principal Plasma Enhanced Chemical Vapor Deposition (PECVD) Semiconductor Process Engineer Basic Qualifications for Plasma Enhanced Chemical Vapor Deposition (PECVD)

Semiconductor Process Engineer:

• Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or any related STEM degree with 2years relevant industry experience (Masters with 0yrs exp)
• Hands-on experience running PECVD/Diffusion process equipment and with process sustaining/development activities.
• Experience with TEOS- and silane-based dielectric deposition
• Experience with thin film characterization equipment and techniques
• Experience with PECVD/Diffusion
• Must be able to work a large percentage of time working in a Class 100 cleanroom environment.
• Must be able to work the 2nd shift, covering at a minimum Monday - Friday 2pm-11pm.
• Knowledge of statistical process control (SPC).
• Must be able to obtain and maintain a Secret clearance.
• US Citizenship required.

Basic Qualifications for Principal Plasma Enhanced Chemical Vapor Deposition (PECVD)

Semiconductor Process Engineer:

• Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or any related STEM degree with 5 years relevant industry experience (Masters with 3 yrs exp or PhD with 1 yr exp)
• Hands-on experience running PECVD/Diffusion process equipment and with process sustaining/development activities.
• Experience with TEOS- and silane-based dielectric deposition
• Experience with thin film characterization equipment and techniques
• Experience with PECVD/Diffusion
• Must be able to work a large percentage of time working in a Class 100 cleanroom environment.
• Must be able to work the 2nd shift, covering at a minimum Monday - Friday 2pm-11pm.
• Knowledge of statistical process control (SPC).
• Must be able to obtain and maintain a Secret clearance.
• US Citizenship required.

Preferred Qualifications:

• Direct experience with semiconductor fabrication, working in a cleanroom environment.
• Demonstrated ability to communicate well with others and work independently
• Excellent project management skills with demonstrated ability to identify manufacturing improvements, manage change, and implement solutions.
• Experience in structured problem-solving methodology to troubleshoot tool and process issues.
• Data analysis and visualization (JMP and/or MiniTab).
• Advanced knowledge of statistical process control (SPC).
• Active Secret clearance.

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NGMCFab Primary Level Salary Range:

$87,600.00 - $131,400.00

Secondary Level Salary Range:

$108,800.00 - $163,200.00 The above salary range represents a general guideline; however, Northrop Grumman considers a number of factors when determining base salary offers such as the scope and responsibilities of the position and the candidate's experience, education, skills and current market conditions. Depending on the position, employees may be eligible for overtime, shift differential, and a discretionary bonus in addition to base pay. Annual bonuses are designed to reward individual contributions as well as allow employees to share in company results. Employees in Vice President or Director positions may be eligible for Long Term Incentives. In addition, Northrop Grumman provides a variety of benefits including health insurance coverage, life and disability insurance, savings plan, Company paid holidays and paid time off (PTO) for vacation and/or personal business. The application period for the job is estimated to be 20 days from the job posting date. However, this timeline may be shortened or extended depending on business needs and the availability of qualified candidates. Northrop Grumman is an Equal Opportunity Employer, making decisions without regard to race, color, religion, creed, sex, sexual orientation, gender identity, marital status, national origin, age, veteran status, disability, or any other protected class. For our complete EEO and pay transparency statement, please visit http://www.northropgrumman.com/EEO. U.S. Citizenship is required for all positions with a government clearance and certain other restricted positions.