Device Development Engineer Tower Semiconductor United States, California, port Beach 4321 Jamboree Road (Show on map) Aug 29, 2026 About Tower Semiconductor Recruiting World Class Talent For A World Class Leader! Join Tower Semiconductor! Looking for a career path in the high tech manufacturing industry? Become part of a team focused on delivering the most exciting semiconductor technology to the world! If you enjoy working with others in a fast pace environment and are looking for an opportunity to grow your career in the high tech industry then Tower Semiconductor is the place to be! Tower Semiconductor is a global specialty foundry leader! We specialize in manufacturing analog integrated circuits for more than 300 customers worldwide in growing markets such as automotive, medical, industrial, consumer and aerospace and defense, among others. Job Description The candidate will be responsible for the development and optimization of semiconductor lasers and other III-V semiconductor devices within Tower's manufacturing facilities. The role encompasses first principles simulation of devices, development and optimization of epitaxial growth techniques, process integration to build such devices within Tower fabs, and test and analysis of the resulting devices. This Job is for you If Can In-depth knowledge and experience with developing III-V semiconductor processing steps and integration Expert-level understanding of the outputs and figures of merit for lasers and other III-V device Optical and electrical characterization experience of III-V devices (lasers, amplifiers, modulators, transistors) Job Requirements Have a PhD in semiconductor optics or a related field and/or at least 5 years of experience in a similar role at another company Practical knowledge of III-V epitaxial reactor growth concerns (MOCVD or MBE) In-depth knowledge and experience with developing III-V semiconductor processing steps and integration Expert-level understanding of the outputs and figures of merit for lasers and other III-V devices Optical and electrical characterization experience of III-V devices (lasers, amplifiers, modulators, transistors) Experience with troubleshooting and improving yield for such devices in a manufacturing environment Hands-on experience with heterogeneous integration of III-V devices with silicon devices (photonics, BiCMOS, power) Basic understanding of primary reliability failure modes for III-V devices (especially lasers) Experience in a volume foundry manufacturing environment

Compensation:

$160,000 - $220,000 #IND100