About the Role We are seeking a MOCVD / Epitaxy Engineer to support the growth and development of III-V semiconductor materials used in advanced laser and photonic devices. This is a hands-on engineering role supporting both production and R&D. The engineer will work closely with epitaxy, process, device, and manufacturing teams to improve material quality, process consistency, and device performance. Key Responsibilities Perform MOCVD epitaxial growth of III-V semiconductor materials Operate and monitor MOCVD reactors and support day-to-day production Support optimization of epitaxial growth recipes and process parameters Analyze epitaxial material quality and investigate process or material issues Troubleshoot MOCVD process and equipment issues Work with process and device engineering teams to improve material quality, device performance, and yield Support equipment maintenance, qualification, and reliability improvements Maintain process documentation, experimental results, and production records Support production and R&D activities for semiconductor laser and photonic devices Qualifications 2+ years of hands-on MOCVD/MOVPE or related III-V epitaxial growth experience Experience with III-V semiconductor materials such as InP, GaAs, AlGaAs, InGaAs, or related material systems Experience with semiconductor lasers, photonics, optoelectronics, or compound semiconductors is highly preferred Familiarity with epitaxial material characterization techniques Experience operating, monitoring, or troubleshooting epitaxial growth equipment Master's degree in Materials Science, Electrical Engineering, Physics, Chemistry, Chemical Engineering, or a related field preferred Bachelor's degree with relevant industry experience will also be considered Preferred Experience Experience with any of the following is a plus: InP-based epitaxy DFB or EML lasers Semiconductor laser materials Photonic or optoelectronic devices MOCVD process development III-V material characterization High-volume semiconductor manufacturing